PBN ceramic part
Main production of fire assay crucible,Graphite crucible,Silicon carbide crucible.Also accept OEM and ODM.
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Main production of fire assay crucible,Graphite crucible,Silicon carbide crucible.Also accept OEM and ODM.
Liling xing tai long special ceramic co.,ltd relying on years of market experience and strong scientific research technology, successfully developed MBE PBN pyrolytic boron nitride crucible. After the MBE PBN pyrolytic boron nitride crucible was launched, we received good feedback, and our customers believed that this type of product could meet their own needs. By gathering the elites in the industry together,Liling xing tai long special ceramic co.,ltd aim to make full use of their wisdom and experience to develop and manufacture competitive products. Our great wish is to become a leading enterprise on a global scale.
| Place of Origin: | Hunan, China | Type: | Ceramic Parts |
| Application: | Structure Ceramic, High Temperature Insulation Parts, | Material: | Alumina Ceramic, Ceramic Pyrolytic Boron Nitride PBN |
| Model Number: | XTL,Customized | Brand Name: | XTL,OEM |
| Product name: | PBN Crucible Ceramic High Temperature Crucible Product Customization | Tensile Strength: | 153.86 N/mm^2 |
| Color: | White or Lvory | Package: | In wooden cases, lined with sponge or according to customer's request |
| Density: | 2.2~2.3 or 2.2~2.3 | Working Temperature: | About 2200 Celsius Degree |
| Characteristic: | Easily Machinable,Excellent Thermal Shock Resistance | Thermal Conductivity(200C):: | a:60 / c:2.6 |
PBN Crucible Ceramic High Temperature Crucible
Product Customization
Performance for PBN Ceramic Part
|
Item |
Unit |
Data |
|
|
Apparent Density |
g/cm3 |
2.15-2.19 |
|
|
Gas permeability(He) |
cm3/s |
<1*10-10 |
|
|
Micro hardness(Knoop) |
N/mm2 |
691.88(a-b plane) |
|
|
Tensile strength |
N/mm2 |
153.86(parallel) |
|
|
Bending strength |
N/mm2 |
243.63(parallel) |
197.76(parallel) |
|
Modulus of elasticity |
N/mm2 |
235690 |
|
|
Specific heat capacity |
Cal/g.℃ |
0.371(@ 200℃) |
0.442(@ 900℃) |
|
Thermal conductivity 200℃ |
W/cm.k |
0.6(parallel) |
0.026(perpendicular) |
|
Thermal conductivity 900℃ |
W/cm.k |
0.4370(parallel) |
0.028(perpendicular) |
|
Dielectric Strength(RT) |
KV/mm |
56 |
|
|
Volume Resistivity |
Cm |
3.11*1011 |
|
APPLICATION
Used to synthesize single semiconductor crystal and III-V compounds by VGF or VB method
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