XTL has a collection of 1800 degree ceramic PBN crucible for melting available from manufacturers around the world so if you'd like to buy some, do give a look. The key to 1800 degree ceramic PBN crucible for melting competitiveness is innovation. We strictly stick to the concept of scientific design, which contributes to the unique appearance and easy-to-use performance of our Manufacturing fire assay crucible ,cupel ,high pure alumina ceramic product, silicon carbide ceramic product,graphite ceramic product.. Also, we never use inferior raw materials and ensure they are all tested by our QC inspectors, thereby, guaranteeing Ceramics quality. We believe that our product with so many advantages can bring benefits to all customers.
Place of Origin: | Hunan, China | Type: | Ceramic Parts |
Application: | Structure Ceramic, High Temperature Insulation Parts, | Material: | Alumina Ceramic, Ceramic Pyrolytic Boron Nitride PBN |
Model Number: | XTL,Customized | Brand Name: | XTL,OEM |
Product name: | PBN Crucible Ceramic High Temperature Crucible Product Customization | Tensile Strength: | 153.86 N/mm^2 |
Color: | White or Lvory | Package: | In wooden cases, lined with sponge or according to customer's request |
Density: | 2.2~2.3 or 2.2~2.3 | Working Temperature: | About 2200 Celsius Degree |
Characteristic: | Easily Machinable,Excellent Thermal Shock Resistance | Thermal Conductivity(200C):: | a:60 / c:2.6 |
PBN Crucible Ceramic High Temperature Crucible
Product Customization
Performance for PBN Ceramic Part
Item |
Unit |
Data |
|
Apparent Density |
g/cm3 |
2.15-2.19 |
|
Gas permeability(He) |
cm3/s |
<1*10-10 |
|
Micro hardness(Knoop) |
N/mm2 |
691.88(a-b plane) |
|
Tensile strength |
N/mm2 |
153.86(parallel) |
|
Bending strength |
N/mm2 |
243.63(parallel) |
197.76(parallel) |
Modulus of elasticity |
N/mm2 |
235690 |
|
Specific heat capacity |
Cal/g.℃ |
0.371(@ 200℃) |
0.442(@ 900℃) |
Thermal conductivity 200℃ |
W/cm.k |
0.6(parallel) |
0.026(perpendicular) |
Thermal conductivity 900℃ |
W/cm.k |
0.4370(parallel) |
0.028(perpendicular) |
Dielectric Strength(RT) |
KV/mm |
56 |
|
Volume Resistivity |
Cm |
3.11*1011 |
APPLICATION
Used to synthesize single semiconductor crystal and III-V compounds by VGF or VB method
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